Inventor · Schenectady, NY, US

Kangguo Cheng

2,819Patents
38h-index
365Co-inventors
93Inventor score

Filing activity: Jun 25, 2003 → Dec 27, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US8969934B1 Gate-all-around nanowire MOSFET and method of formation Electricity 308 Active
US9842835B1 High density nanosheet diodes Electricity 282 Active
US10229985B1 Vertical field-effect transistor with uniform bottom spacer Electricity 267 Active
US9362355B1 Nanosheet MOSFET with full-height air-gap spacer Electricity 145 Active
US10418277B2 Air gap spacer formation for nano-scale semiconductor devices Electricity 136 Active
US9368572B1 Vertical transistor with air-gap spacer Electricity 124 Active
US7700466B2 Tunneling effect transistor with self-aligned gate Emerging Cross-Sectional Technologies 119 Active
US7811881B2 Methods for forming semiconductor structures with buried isolation collars and semiconductor structures formed by these methods Electricity 112 Active
US9837414B1 Stacked complementary FETs featuring vertically stacked horizontal nanowires Electricity 105 Active
US7993999B2 High-K/metal gate CMOS finFET with improved pFET threshold voltage Electricity 100 Active
US9653289B1 Fabrication of nano-sheet transistors with different threshold voltages Electricity 96 Active
US9608065B1 Air gap spacer for metal gates Electricity 89 Active
US9620590B1 Nanosheet channel-to-source and drain isolation Electricity 86 Active
US9443982B1 Vertical transistor with air gap spacers Electricity 71 Active
US9659963B2 Contact formation to 3D monolithic stacked FinFETs Electricity 70 Active
US9660028B1 Stacked transistors with different channel widths Electricity 69 Active
US9716158B1 Air gap spacer between contact and gate region Electricity 67 Active
US9570551B1 Replacement III-V or germanium nanowires by unilateral confined epitaxial growth Electricity 67 Active
US7560784B2 Fin PIN diode Electricity 63 Active
US9773913B1 Vertical field effect transistor with wrap around metallic bottom contact to improve contact resistance Electricity 62 Active
US10263100B1 Buffer regions for blocking unwanted diffusion in nanosheet transistors Electricity 61 Active
US8569152B1 Cut-very-last dual-epi flow Electricity 59 Active
US8169025B2 Strained CMOS device, circuit and method of fabrication Electricity 57 Active
US8420459B1 Bulk fin-field effect transistors with well defined isolation Electricity 57 Active
US9984936B1 Methods of forming an isolated nano-sheet transistor device and the resulting device Electricity 55 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.