Dry etching method and photonic crystal device fabricated by use of the same
US7563379B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2004 |
| Grant date | Jul 21, 2009 |
| Priority date | — |
| Expiry date | May 29, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0812
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
In a dry etching method in which clusters formed by agglomeration of atoms or molecules are ionized and accelerated as a cluster ion beam for irradiation of an object surface to etch away therefrom its constituent atoms, the clusters are mixed clusters 42 formed by agglomeration of two or more kinds of atoms or molecules, and the mixed clusters 42 contain atoms 43 of at least one of argon, neon, xenon and krypton, and a component 44 that is deposited on the object surface to form a thin film by reaction therewith. With this method, it is possible to provide an extremely reduced sidewall surface roughness and high vertical machining accuracy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.