Phase-changeable memory device and method of manufacturing the same
US7563639B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2007 |
| Grant date | Jul 21, 2009 |
| Priority date | — |
| Expiry date | Apr 9, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
In a semiconductor memory device and a method of manufacturing the same, an insulating layer is formed on a substrate having a logic region on which a first pad is provided and a cell region on which a second pad and a lower electrode are subsequently provided. The insulating layer is etched to be a first insulating layer pattern having a first opening exposing the first pad. A first plug is formed in the first opening. The first insulating layer pattern where the first plug is formed is etched to be a second insulating layer pattern having a second opening exposing the lower electrode. A second plug including a phase-changeable material is formed in the second opening. A conductive wire and an upper electrode are formed on the first plug and the second plug, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.