Jong-Chan Shin
9Patents
5h-index
19Co-inventors
56Inventor score
Filing activity: Jul 1, 1999 → Nov 12, 2012
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7800095B2 | Phase-change memory device having phase change material pattern shared between adjacent cells and electronic product including the phase-change memory | Electricity | 31 | Active |
| US7767568B2 | Phase change memory device and method of fabricating the same | Electricity | 12 | Active |
| US7563639B2 | Phase-changeable memory device and method of manufacturing the same | Electricity | 10 | Active |
| US8906757B2 | Methods of forming patterns of a semiconductor device | Electricity | 9 | Active |
| US6316358A | Method for fabricating an integrated circuit device | Electricity | 7 | Expired |
| US8238147B2 | Multi-level phase change memory device, program method thereof, and method and system including the same | Emerging Cross-Sectional Technologies | 4 | Active |
| US7638788B2 | Phase change memory device and method of forming the same | Emerging Cross-Sectional Technologies | 1 | Active |
| US8563383B2 | Method of manufacturing a semiconductor device | Electricity | 0 | Active |
| US8691693B2 | Methods of manufacturing semiconductor device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.