Semiconductor device and method of manufacturing the same
US7563678B2 · kind B2 · utility
16Cited by
3References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 22, 2007 |
| Grant date | Jul 21, 2009 |
| Priority date | — |
| Expiry date | Feb 29, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0177
Abstract
It is possible to provide a semiconductor device including a CMOS device having a gate electrode, in which the variation in threshold voltage is little. There are a p-channel MIS transistor and a n-channel MIS transistor which are provided in a semiconductor substrate, and in a region of a gate electrode of the p-channel MIS transistor at least 1 nm or less apart from the interface with a gate insulating film, the oxygen concentration is 1020 cm−3 or more and 1022 cm−3 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.