Method for fabricating capacitor in semiconductor device
US7563688B2 · kind B2 · utility
1Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2006 |
| Grant date | Jul 21, 2009 |
| Priority date | — |
| Expiry date | Jan 16, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A method for fabricating a capacitor in a semiconductor device includes forming a stack structure providing a plurality of open regions, the stack structure including an insulation layer and a hard mask pattern, forming a conductive layer over the stack structure and in the open regions, etching a portion of the conductive layer formed outside the open regions to form bottom electrodes in the open regions, removing the hard mask pattern, and etching upper portions of the bottom electrodes that are exposed after the hard mask pattern is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.