Method of producing thin films
US7563715B2 · kind B2 · utility
490Cited by
94References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 5, 2005 |
| Grant date | Jul 21, 2009 |
| Priority date | — |
| Expiry date | Jan 6, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for producing metal nitride thin films comprising doping the metal nitride thin films by atomic layer deposition (ALD) with silicon or boron or a combination thereof. The work function of metal nitride thin films, which are used in metal electrode applications, can efficiently be tuned.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.