Transistor including a deposited channel region having a doped portion
US7564055B2 · kind B2 · utility
54Cited by
29References
23Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 24, 2007 |
| Grant date | Jul 21, 2009 |
| Priority date | — |
| Expiry date | Sep 13, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/00
Abstract
A transistor having a gate electrode, a source electrode, a drain electrode, a dielectric material and a channel region disposed between the source electrode and drain electrode. The channel region includes a portion doped with an impurity to change the fixed charge density within the portion relative to a remainder of the channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.