Scalable power field effect transistor with improved heavy body structure and method of manufacture
US7564096B2 · kind B2 · utility
1Cited by
16References
38Claims
0Family size
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Key dates
| Filing date | Feb 9, 2007 |
| Grant date | Jul 21, 2009 |
| Priority date | — |
| Expiry date | Feb 9, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/027
Abstract
A field effect transistor (FET) includes a semiconductor region of a first conductivity type and a well region of a second conductivity type extending over the semiconductor region. A gate electrode is adjacent to but insulated from the well region, and a source region of the first conductivity type is in the well region. A heavy body region is in electrical contact with the well region, and includes a material having a lower energy gap than the well region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.