Semiconductor power device and RF signal amplifier
US7564303B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2005 |
| Grant date | Jul 21, 2009 |
| Priority date | — |
| Expiry date | Oct 29, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/451
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor power device comprises a flange, a die having a gate, a source, and a drain. The source is electrically coupled to the flange. A drain matching circuit is located on the flange having an input, an output and a bias input, the input being coupled with the drain. The drain matching circuit comprises an inductor coupled in series with a first capacitor between the drain and flange and a second capacitor arranged next to the first capacitor, wherein the second capacitor is coupled with the bias input and in parallel with the first capacitor through a second inductor. An input terminal is mechanically coupled to the flange and electrically coupled with the gate, an output terminal is mechanically coupled to the flange and electrically coupled with the output of the drain matching circuit, and an input bias terminal is mechanically coupled to the flange and electrically coupled with the drain through the bias input.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.