Magnetoresistive sensor having an anisotropic pinned layer for pinning improvement
US7564659B2 · kind B2 · utility
12Cited by
3References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 9, 2005 |
| Grant date | Jul 21, 2009 |
| Priority date | — |
| Expiry date | Sep 9, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R33/093
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A magnetoresistive sensor having a magnetically anisotropic pinned layer structure. The pinned layer structure is formed over a seed layer having a surface that has been treated to texture the surface of the seed layer with an anisotropic roughness. This anisotropic roughness induces the magnetic anisotropy in the pinned layers. The treated seed layers also allow the pinned layer to maintain robust pinning without the need for a thick AFM layer, thereby reducing gap size.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.