Method of programming memory device
US7564708B2 · kind B2 · utility
3Cited by
6References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2006 |
| Grant date | Jul 21, 2009 |
| Priority date | — |
| Expiry date | Oct 21, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/32
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a memory device having first and second electrodes and active and passive layers between the electrodes, or a memory device having first and second electrodes and an insulating layer between and in contact with electrodes, the device may be programmed in the ionic mode by applying electrical potential across the electrodes in one direction, and may be programmed in the electronic charge carrier mode by applying electrical potential across electrodes in the opposite direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.