Epitaxial silicon germanium for reduced contact resistance in field-effect transistors

US7566605B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Lucian Shifren · San Jose, US
• Jack T. Kavalieros · Portland, US
• Steven M. Cea · Hillsboro, US
• Cory E. Weber · Portland, US
• Justin K. Brask · Portland, US

Key dates

• Filing date: Mar 31, 2006
• Grant date: Jul 28, 2009
• Expiry date: May 7, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822

Abstract

A method for selectively relieving channel stress for n-channel transistors with recessed, epitaxial SiGe source and drain regions is described. This increases the electron mobility for the n-channel transistors without affecting the strain in p-channel transistors. The SiGe provides lower resistance when a silicide is formed.