Selective etching of MEMS using gaseous halides and reactive co-etchants
US7566664B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2006 |
| Grant date | Jul 28, 2009 |
| Priority date | — |
| Expiry date | Mar 14, 2027 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0132
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for etching a target material in the presence of a structural material with improved selectivity uses a vapor phase etchant and a co-etchant. Embodiments of the method exhibit improved selectivities of from at least about 2-times to at least about 100-times compared with a similar etching process not using a co-etchant. In some embodiments, the target material comprises a metal etchable by the vapor phase etchant. Embodiments of the method are particularly useful in the manufacture of MEMS devices, for example, interferometric modulators. In some embodiments, the target material comprises a metal etchable by the vapor phase etchant, for example, molybdenum and the structural material comprises a dielectric, for example silicon dioxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.