Field effect transistor with suitable source, drain and channel materials and integrated circuit comprising same

US7566922B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventor

• Simon Deleonibus · Le Pont-de-Claix, FR

Key dates

• Filing date: Mar 25, 2005
• Grant date: Jul 28, 2009
• Expiry date: Mar 25, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/824

Abstract

The normally on transistor comprises a source, a drain and a channel. The source, drain and channel materials are chosen such that, for a NMOS type transistor, the electronic affinity of the drain material is lower than the electronic affinity of the channel material and the electronic affinity of the source material is higher than the electronic affinity of the channel material. Moreover, the materials are selected such that, for a PMOS type transistor, the upper level of the valence band of the drain material is higher than the upper level of the valence band of the channel material and the upper level of the valence band of the source material is lower than the upper level of the valence band of the channel material.