Magnetic sensing element with improved magnetic sensitivity stability and method for producing the same
US7567412B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2005 |
| Grant date | Jul 28, 2009 |
| Priority date | — |
| Expiry date | Mar 10, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1193
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic sensing element includes a free magnetic layer having a three-layer structure including a first enhancement layer in contact with a nonmagnetic material layer, a second enhancement layer, and a low-coercivity layer. The second enhancement layer has a lower magnetostriction coefficient λ than the first enhancement layer. If such an enhancement layer having a bilayer structure is used, rather than a known monolayer structure, and the second enhancement layer has a lower magnetostriction coefficient λ than the first enhancement layer, the rate of change in magnetoresistance of the magnetic sensing element can be increased with no increase in the magnetostriction coefficient λ of the free magnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.