Inventor · Niigata, JP

Ryo Nakabayashi

26Patents
4h-index
35Co-inventors
59Inventor score

Filing activity: Jul 28, 2005 → Sep 30, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US7933100B2 Tunneling magnetic sensor including free magnetic layer and magnesium protective layer disposed thereon Electricity 17 Active
US7898776B2 Tunneling magnetic sensing element including enhancing layer having high Fe concentration in the vicinity of barrier layer Electricity 6 Active
US8208231B2 Tunneling magnetic sensing element with insertion magnetic layer inspired into soft magnetic layer Emerging Cross-Sectional Technologies 6 Active
US8009391B2 Magnetic sensing element and method for manufacturing the same Electricity 5 Active
US7760473B2 Magnetoresistance element employing Heusler alloy as magnetic layer Electricity 4 Active
US7881024B2 Tunnel-type magnetic detecting element and method of manufacturing the same Electricity 3 Active
US7916436B2 Tunneling magnetic sensor including platinum layer and method for producing the same Electricity 3 Active
US7787221B2 Tunneling magnetic sensing element including non-magnetic metal layer between magnetic layers Electricity 3 Active
US7969693B2 Tunnel magnetoresistive sensor in which at least part of pinned layer is composed of CoFeB layer and method for manufacturing the tunnel magnetoresistive sensor Electricity 2 Active
US10283266B2 Powder core, manufacturing method of powder core, inductor including powder core, and electronic/electric device having inductor mounted therein Electricity 2 Active
US8124253B2 Tunneling magnetic sensing element including MGO film as insulating barrier layer Emerging Cross-Sectional Technologies 2 Active
US11774653B2 Wavelength conversion film, light-emitting member, authentication device, wristband type electronic apparatus and biometric device Physics 1 Active
US7567412B2 Magnetic sensing element with improved magnetic sensitivity stability and method for producing the same Emerging Cross-Sectional Technologies 1 Active
US8023233B2 Tunneling magnetic sensing element including free magnetic layer and IrMn protective layer disposed thereon and method for manufacturing the same Emerging Cross-Sectional Technologies 1 Active
US7961442B2 Tunneling magnetic detecting element having insulation barrier layer and method for making the same Emerging Cross-Sectional Technologies 1 Active
US7907370B2 Tunneling magnetic sensing element having free layer containing CoFe alloy Electricity 0 Active
US7643254B2 Tunnel-effect type magnetic sensor having free layer including non-magnetic metal layer Electricity 0 Active
US12268486B2 Reflective photoplethysmogram sensor and biological information measurement apparatus Human Necessities 0 Active
US12410366B2 Infrared-emitting compound, and luminescent thin film, luminescent particle, wavelength conversion film and infrared-emitting surface light source containing same Electricity 0 Active
US7397639B2 Magnetic detecting element provided with free layer having layered-ferri configuration Physics 0 Active
US11820398B2 Learning apparatus and model learning system Physics 0 Active
US12224092B2 Compression molded core, method for manufacturing the compression molded core, inductor including the compression molded core, and electric/electronic equipment mounted with the inductor Electricity 0 Active
US8054588B2 Tunneling magnetoresistive element including multilayer free magnetic layer having inserted nonmagnetic metal sublayer Electricity 0 Active
US7969690B2 Tunneling magnetoresistive element which includes Mg-O barrier layer and in which nonmagnetic metal sublayer is disposed in one of magnetic layers Electricity 0 Active
US8045300B2 Tunneling magnetic sensing element and method for producing same Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.