Interconnect structure having enhanced electromigration reliability and a method of fabricating same
US7569475B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2006 |
| Grant date | Aug 4, 2009 |
| Priority date | — |
| Expiry date | Jan 30, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interconnect structure having improved electromigration (EM) reliability is provided. The inventive interconnect structure avoids a circuit dead opening that is caused by EM failure by incorporating a EM preventing liner at least partially within a metal interconnect. In one embodiment, a “U-shaped” EM preventing liner is provided that abuts a diffusion barrier that separates conductive material from the dielectric material. In another embodiment, a space is located between the “U-shaped” EM preventing liner and the diffusion barrier. In yet another embodiment, a horizontal EM liner that abuts the diffusion barrier is provided. In yet a further embodiment, a space exists between the horizontal EM liner and the diffusion barrier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.