Plasma and electron beam etching device and method
US7569484B2 · kind B2 · utility
14Cited by
8References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2006 |
| Grant date | Aug 4, 2009 |
| Priority date | — |
| Expiry date | Mar 29, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/909
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a plasma source to provide an increased reactive species density. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.