Silicon-rich-oxide white light photodiode
US7569864B2 · kind B2 · utility
0Cited by
4References
14Claims
0Family size
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Key dates
| Filing date | May 3, 2006 |
| Grant date | Aug 4, 2009 |
| Priority date | — |
| Expiry date | Jul 6, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
Abstract
A white light photodiode has a film layer and an ultraviolet (UV) photodiode. The film layer is made of an oxide rich in silicon; and is formed through a chemical vapor deposition. A white light can be generated by exciting the film layer with a UV light from the UV photodiode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.