Wafer level hermetic bond using metal alloy with raised feature
US7569926B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2005 |
| Grant date | Aug 4, 2009 |
| Priority date | — |
| Expiry date | Feb 23, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/01079
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Systems and methods for forming an encapsulated device include a hermetic seal which seals an insulating environment between two substrates, one of which supports the device. The hermetic seal is formed by an alloy of two metal layers, one deposited on a first substrate and the other deposited on the second substrate, along with a raised feature formed on the first or the second substrate. At least one of the metal layers may be deposited conformally over the raised feature. The raised feature penetrates the molten material of the first or the second metal layers during formation of the alloy, and produces a spectrum of stoichiometries for the formation of the desired alloy, as a function of the distance from the raised feature. At some distance from the raised feature, the proper ratio of the first metal to the second metal exists to form an alloy of the preferred stoichiometry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.