Diffused aerial image model semiconductor device fabrication
US7571424B2 · kind B2 · utility
1Cited by
14References
3Claims
0Family size
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Key dates
| Filing date | Nov 3, 2006 |
| Grant date | Aug 4, 2009 |
| Priority date | — |
| Expiry date | Nov 27, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/705
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A lithography method has a simulation method for mathematically approximating a photoresist film pattern with a Diffused Aerial Image Model (“DAIM”) for semiconductor device fabrication. The DAIM is applied with at least two acids having heterogeneous diffusion characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.