Patent · US Active

Circuit for programming a memory element

US7571901B2 · kind B2 · utility

21Cited by
9References
35Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJun 21, 2007
Grant dateAug 11, 2009
Priority date
Expiry dateFeb 15, 2028

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2213/79
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

An integrated circuit includes a memory element and a circuit. The circuit is configured to program the memory element by applying one or more pulses to the memory element until a sensed resistance of the memory element is within a range of a desired resistance. The one or more pulses have a parameter value that is modified for each subsequent pulse based on the parameter value for an immediately preceding pulse and on a difference between the sensed resistance of the memory element and the desired resistance.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.