Patent assignee · US · COMPANY

Qimonda North America Corp.

81Patents
81Active
81Granted
57Portfolio score

Filing activity: May 1, 2006 → Sep 21, 2010 · 81 expiring within 5 years

Most-cited patents

PatentTitleAreaCited byStatus
US7515461B2 Current compliant sensing architecture for multilevel phase change memory Physics 77 Active
US7405964B2 Integrated circuit to identify read disturb condition in memory cell Physics 32 Active
US7796424B2 Memory device having drift compensated read operation and associated method Physics 31 Active
US7619917B2 Memory cell with trigger element Physics 28 Active
US7522073B1 Self-adapted bus inversion Electricity 27 Active
US7453081B2 Phase change memory cell including nanocomposite insulator Emerging Cross-Sectional Technologies 27 Active
US7623401B2 Semiconductor device including multi-bit memory cells and a temperature budget sensor Physics 25 Active
US7545668B2 Mushroom phase change memory having a multilayer electrode Electricity 21 Active
US8138028B2 Method for manufacturing a phase change memory device with pillar bottom electrode Electricity 21 Active
US7571901B2 Circuit for programming a memory element Physics 21 Active
US7539050B2 Resistive memory including refresh operation Physics 20 Active
US7822910B2 Method of flexible memory segment assignment using a single chip select Physics 19 Active
US7440347B1 Circuit and method to find wordline-bitline shorts in a DRAM Physics 18 Active
US7593255B2 Integrated circuit for programming a memory element Physics 17 Active
US7714315B2 Thermal isolation of phase change memory cells Electricity 16 Active
US7710754B2 Method of simple chip select for memory subsystems Electricity 15 Active
US7679980B2 Resistive memory including selective refresh operation Physics 15 Active
US7515455B2 High density memory array for low power application Physics 14 Active
US7694196B2 Self-diagnostic scheme for detecting errors Electricity 14 Active
US7719886B2 Multi-level resistive memory cell using different crystallization speeds Emerging Cross-Sectional Technologies 14 Active
US7746098B2 Termination switching based on data rate Emerging Cross-Sectional Technologies 13 Active
US7457146B2 Memory cell programmed using a temperature controlled set pulse Physics 11 Active
US7639066B2 Circuit and method for suppressing gate induced drain leakage Physics 11 Active
US7765418B2 Multi-mode voltage supply circuit Physics 11 Active
US7932507B2 Current constricting phase change memory element structure Electricity 10 Active

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.