Method of forming a bond pad on an I/C chip and resulting structure

US7572726B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Julie C. Biggs · Wappingers Falls, US
• Tien-Jen Cheng · Bedford, US
• David E. Eichstadt · Chicago, US
• Lisa A. Fanti · Hopewell Junction, US
• Jonathan H. Griffith · Hopewell Junction, US
• Randolph F. Knarr · Goldens Bridge, US
• Sarah H. Knickerbocker · Hopewell Junction, US
• Kevin S. Petrarca · Newburgh, US
• Roger A. Quon · Austin, US
• Wolfgang Sauter · Avon, US
• Kamalesh K. Srivastava · Wappingers Falls, US
• Richard P. Volant · New Fairfield, US

Key dates

• Filing date: Nov 10, 2005
• Grant date: Aug 11, 2009
• Expiry date: Jan 16, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/14
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming wire bonds in (I/C) chips comprising: providing an I/C chip having a conductive pad for a wire bond with at least one layer of dielectric material overlying the pad; forming an opening through the dielectric material exposing a portion of said pad. Forming at least a first conductive layer on the exposed surface of the pad and on the surface of the opening. Forming a seed layer on the first conductive layer; applying a photoresist over the seed layer; exposing and developing the photoresist revealing the surface of the seed layer surrounding the opening; removing the exposed seed layer; removing the photoresist material in the opening revealing the seed layer. Plating at least one second layer of conductive material on the seed layer in the opening, and removing the first conductive layer on the dielectric layer around the opening. The invention also includes the resulting structure.