Method to modulate etch rate in SLAM
US7572732B2 · kind B2 · utility
2Cited by
3References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 3, 2006 |
| Grant date | Aug 11, 2009 |
| Priority date | — |
| Expiry date | May 8, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76802
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Several techniques are described for modulating the etch rate of a sacrificial light absorbing material (SLAM) by altering its composition so that it matches the etch rate of a surrounding dielectric. This particularly useful in a dual damascene process where the SLAM fills a via opening and is etched along with a surrounding dielectric material to form trenches overlying the via opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.