Lateral double diffused MOS transistors
US7573097B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 3, 2004 |
| Grant date | Aug 11, 2009 |
| Priority date | — |
| Expiry date | Jan 18, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The specification describes an improved mechanical electrode structure for MOS transistor devices with elongated runners. It recognizes that shrinking the geometry increases the likelihood of mechanical failure of comb electrode geometries. The mechanical integrity of a comb electrode is improved by interconnecting the electrode fingers in a cross-connected grid. In one embodiment, the transistor device is interconnected with gate fingers on a lower metaliization level, typically the first level metal, with the drain interconnected at a higher metal level. That allows the drain fingers to be cross-connected with a vertical separation between drain and gate comb electrodes. The cross-connect members may be further stabilized by adding beam extensions to the cross-connect members. The beam extensions may be anchored in an interlevel dielectric layer for additional support.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.