Method of manufacturing nitride-based semiconductor light emitting diode
US7575944B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2007 |
| Grant date | Aug 18, 2009 |
| Priority date | — |
| Expiry date | Feb 28, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/833
Abstract
Provided is a method of manufacturing a nitride-based semiconductor LED including sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a Pd/Zn alloy layer on the p-type nitride semiconductor layer; heat-treating the p-type nitride semiconductor layer on which the Pd/Zn alloy layer is formed; removing the Pd/Zn alloy layer formed on the p-type nitride semiconductor layer; mesa-etching portions of the p-type nitride semiconductor layer, the active layer, and the n-type nitride semiconductor layer such that a portion of the upper surface of the n-type nitride semiconductor layer is exposed; and forming an n-electrode and a p-electrode on the exposed n-type nitride semiconductor layer and the p-type nitride semiconductor layer, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.