Method of forming pattern using fine pitch hard mask
US7576010B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2007 |
| Grant date | Aug 18, 2009 |
| Priority date | — |
| Expiry date | Dec 1, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0338
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a first hard mask pattern including a plurality of first line patterns formed on the etch target layer in a first direction and having a first pitch. A third layer is formed on sidewalls and an upper surface of the first hard mask pattern, such that the third layer includes a top surface having a recess formed between two adjacent first line patterns. A second hard mask pattern including a plurality of second line patterns each extending in the first direction within the recess is formed. Then, the third layer is anisotropically etched to selectively expose an etch target layer between the first line patterns and the second line patterns. Then, the etch target layer is anisotropically etched using the first hard mask pattern and the second hard mask pattern as an etch mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.