Process for manufacturing semiconductor device
US7576016B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2007 |
| Grant date | Aug 18, 2009 |
| Priority date | — |
| Expiry date | Oct 2, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/315
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An objective of this invention is to solve the problem that in ALD film deposition using a vertical batch processing machine advantageous for improving a throughput, reliability in a dielectric body formed on the bottom of a hole such as a capacitor formed on a semiconductor substrate is reduced as the hole is finer and deeper.A dielectric body is formed by an ALD film deposition process comprising a gas flow sequence where a purging step after supplying a source and a reactant gases is a two-stage purging of vacuum purging and gas purging and the step of supplying a reactant gas is further divided. The process allows a highly reliable dielectric body to be formed in the bottom of a deep hole, contributing to improvement in reliability of a capacitor and a semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.