Trench-gate LDMOS structures
US7576388B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2004 |
| Grant date | Aug 18, 2009 |
| Priority date | — |
| Expiry date | Dec 8, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
MOSFET devices for RF applications that use a trench-gate in place of the lateral gate conventionally used in lateral MOSFET devices. A trench-gate provides devices with a single, short channel for high frequency gain. Embodiments of the present invention provide devices with an asymmetric oxide in the trench gate, as well as LDD regions that lower the gate-drain capacitance for improved RF performance. Refinements to these TG-LDMOS devices include placing a source-shield conductor below the gate and placing two gates in a trench-gate region. These improve device high-frequency performance by decreasing gate-to-drain capacitance. Further refinements include adding a charge balance region to the LDD region and adding source-to-substrate or drain-to-substrate vias.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.