Semiconductor device
US7576397B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2007 |
| Grant date | Aug 18, 2009 |
| Priority date | — |
| Expiry date | Aug 20, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0181
Abstract
A semiconductor device includes a semiconductor substrate, an nMISFET formed on the substrate, the nMISFET including a first dielectric formed on the substrate and a first metal gate electrode formed on the first dielectric and formed of one metal element selected from Ti, Zr, Hf, Ta, Sc, Y, a lanthanoide and actinide series and of one selected from boride, silicide and germanide compounds of the one metal element, and a pMISFET formed on the substrate, the pMISFET including a second dielectric formed on the substrate and a second metal gate electrode formed on the second dielectric and made of the same material as that of the first metal gate electrode, at least a portion of the second dielectric facing the second metal gate electrode being made of an insulating material different from that of at least a portion of the first dielectric facing the first metal gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.