Backlit photodiode and method of manufacturing a backlit photodiode
US7576404B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2006 |
| Grant date | Aug 18, 2009 |
| Priority date | — |
| Expiry date | Oct 22, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/206
Abstract
A backlit photodiode array includes a semiconductor substrate having first and second main surfaces opposite to each other. A first dielectric layer is formed on the first main surface. First and second conductive vias are formed extending from the second main surface through the semiconductor substrate and the first dielectric layer. The first and second conductive vias are isolated from the semiconductor substrate by a second dielectric material. A first anode/cathode layer of a first conductivity is formed on the first dielectric layer and is electrically coupled to the first conductive via. An intrinsic semiconductor layer is formed on the first anode/cathode layer. A second anode/cathode layer of a second conductivity opposite to the first conductivity is formed on the intrinsic semiconductor layer and is electrically coupled to the second conductive via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.