Power transistor
US7576410B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2006 |
| Grant date | Aug 18, 2009 |
| Priority date | — |
| Expiry date | May 11, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/938
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A power transistor has a source region, a drain region, a semiconductor body arranged between the source region and the drain region, and a plurality of nanotubes. The plurality of nanotubes are connected in parallel and disposed in the semiconductor body such that the plurality of nanotubes are electrically insulated from the semiconductor body and electrically connect the source and drain regions of the transistor. The power transistor also includes at least one diode formed in the semiconductor body. A portion of the at least one diode formed in the semiconductor body is configured to act as a gate electrode for the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.