Magnetic tunnel junction having diffusion stop layer
US7576956B2 · kind B2 · utility
152Cited by
55References
44Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 26, 2005 |
| Grant date | Aug 18, 2009 |
| Priority date | — |
| Expiry date | Sep 30, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Magnetic or magnetoresistive tunnel junctions (MTJs) having diffusion stop layers to eliminate or reduce diffusion of oxygen, nitrogen or other particles from the barrier layer to the ferromagnetic layers during the film deposition process including the barrier oxidation or nitridation process and the post annealing process. Such MTJs may be used in various applications including magnetic memory (MRAM) devices and magnetic recording heads.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.