Method of forming a magnetic tunnel junction structure
US7579197B1 · kind B1 · utility
33Cited by
3References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 4, 2008 |
| Grant date | Aug 25, 2009 |
| Priority date | — |
| Expiry date | Mar 4, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a particular illustrative embodiment, a method of forming a magnetic tunnel junction (MTJ) device is disclosed that includes forming a trench in a substrate. The method further includes depositing a magnetic tunnel junction (MTJ) structure within the trench. The MTJ structure includes a bottom electrode, a fixed layer, a tunnel barrier layer, a free layer, and a top electrode. The method also includes planarizing the MTJ structure. In a particular example, the MTJ structure is planarized using a Chemical Mechanical Planarization (CMP) process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.