Xia Li
324Patents
18h-index
301Co-inventors
89Inventor score
Filing activity: May 7, 1998 → Mar 17, 2025
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9372123B2 | Flexible temperature sensor including conformable electronics | Physics | 111 | Active |
| US8543964B2 | Constraint optimization of sub-net level routing in asic design | Physics | 89 | Active |
| US7885105B2 | Magnetic tunnel junction cell including multiple vertical magnetic domains | Emerging Cross-Sectional Technologies | 61 | Active |
| US9875784B1 | Three-dimensional (3D) ferroelectric dipole metal-oxide semiconductor ferroelectric field-effect transistor (MOSFeFET) system, and related methods and systems | Electricity | 41 | Active |
| USD946937S1 | Cabinet | General | 40 | Active |
| USD922106S1 | Cabinet | General | 40 | Active |
| US9136463B2 | Method of forming a magnetic tunnel junction structure | Electricity | 37 | Active |
| USD948251S1 | Cabinet | General | 37 | Active |
| US8704320B2 | Strain induced reduction of switching current in spin-transfer torque switching devices | Electricity | 36 | Active |
| US10043967B2 | Self-compensation of stray field of perpendicular magnetic elements | Electricity | 36 | Active |
| US8866242B2 | MTJ structure and integration scheme | Electricity | 33 | Active |
| US7579197B1 | Method of forming a magnetic tunnel junction structure | Electricity | 33 | Active |
| US6309933A | Method of fabricating T-shaped recessed polysilicon gate transistors | Electricity | 33 | Expired |
| US8004881B2 | Magnetic tunnel junction device with separate read and write paths | Emerging Cross-Sectional Technologies | 23 | Active |
| US9142762B1 | Magnetic tunnel junction and method for fabricating a magnetic tunnel junction | Electricity | 23 | Active |
| US9437272B1 | Multi-bit spin torque transfer magnetoresistive random access memory with sub-arrays | Physics | 23 | Active |
| US8674465B2 | MRAM device and integration techniques compatible with logic integration | Electricity | 22 | Active |
| US8455965B2 | Fabrication and integration of devices with top and bottom electrodes including magnetic tunnel junctions | Electricity | 22 | Active |
| US9406689B2 | Logic finFET high-K/conductive gate embedded multiple time programmable flash memory | Electricity | 18 | Active |
| USD949606S1 | Cabinet | General | 17 | Active |
| USD781270S1 | Electronic device having antenna | General | 17 | Active |
| US8564079B2 | STT MRAM magnetic tunnel junction architecture and integration | Electricity | 17 | Active |
| US10665578B2 | Display with embedded pixel driver chips | Electricity | 17 | Active |
| US9406875B2 | MRAM integration techniques for technology scaling | Electricity | 16 | Active |
| US9245610B2 | OTP cell with reversed MTJ connection | Physics | 16 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.