Method for fabricating light emitting diode element
US7579202B2 · kind B2 · utility
6Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2007 |
| Grant date | Aug 25, 2009 |
| Priority date | — |
| Expiry date | Mar 18, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/945
Abstract
The present invention discloses a method for fabricating a light emitting diode element, which incorporates an epitaxial process with an etching process to etch LED epitaxial layers bottom up and form side-protrudent structures, whereby the LED epitaxial layers have non-rectangular inclines, which can solve the problem of total reflection and promote light-extraction efficiency. Further, the method of the present invention has a simple fabrication process, which can benefit mass production and lower cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.