Method of fabricating light emitting device and thus-fabricated light emitting device
US7579205B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2005 |
| Grant date | Aug 25, 2009 |
| Priority date | — |
| Expiry date | Aug 17, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting device wafer having a light emitting layer section 24 having an AlGaInP-base double heterostructure, and a GaP light extraction layer 20 disposed on the light emitting layer section so as to allow a first main surface thereof to compose a first main surface of the wafer is fabricated so that the first main surface of the GaP light extraction layer appears as the (100) surface. The first main surface of the GaP light extraction layer 20 composed of the (100) surface is etched using an etching solution for surface roughening to thereby form surface roughening projections 40f. Accordingly, there can be provided a method of fabricating a light emitting device having the GaP light extraction layer agreed with the (100) main surface, capable of readily subjecting the (100) main surface to surface roughening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.