Semiconductor device and method of manufacturing the same
US7579231B2 · kind B2 · utility
25Cited by
12References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 2, 2004 |
| Grant date | Aug 25, 2009 |
| Priority date | — |
| Expiry date | Apr 11, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/915
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method of manufacturing a semiconductor device, comprising forming a metal compound film directly or indirectly on a semiconductor substrate, forming a metal-containing insulating film consisting of a metal oxide film or a metal silicate film by oxidizing the metal compound film, and forming an electrode on the metal-containing insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.