Method of manufacturing a photodiode array with through-wafer vias
US7579273B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2007 |
| Grant date | Aug 25, 2009 |
| Priority date | — |
| Expiry date | Sep 5, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F71/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a photodiode array includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate has a first layer of a first conductivity proximate the first main surface and a second layer of a second conductivity proximate the second main surface. A via is formed in the substrate which extends to a first depth position relative to the first main surface. The via has a first aspect ratio. Generally simultaneously with forming the via, an isolation trench is formed in the substrate spaced apart from the via which extends to a second depth position relative to the first main surface. The isolation trench has a second aspect ratio different from the first aspect ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.