Method and compositions for direct copper plating and filing to form interconnects in the fabrication of semiconductor devices
US7579274B2 · kind B2 · utility
2Cited by
4References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2007 |
| Grant date | Aug 25, 2009 |
| Priority date | — |
| Expiry date | Feb 20, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D5/627
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The object of the present invention is a method and compositions for direct copper plating and filling to form interconnects in the fabrication of semiconductor devices.According to the invention, this method comprises:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.