Fabrication of MEMS devices with spin-on glass
US7579622B2 · kind B2 · utility
1Cited by
6References
10Claims
0Family size
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Inventor
Key dates
| Filing date | Feb 11, 2005 |
| Grant date | Aug 25, 2009 |
| Priority date | — |
| Expiry date | Jul 29, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24479
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making an etched structure in the fabrication of a MEMS device involves depositing a bulk layer, typically of polysilicon, prone to surface roughness. At least one layer of photo-insensitive spin-on planarizing material, such as silicate-based spin-on glass, is formed on the bulk layer to reduce surface roughness. This is patterned with a photoresist layer. A deep etch is then performed through the photoresist layer into the bulk layer. This technique results in much more precise etch structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.