Magnetoresistive sensor having shape enhanced pinning, a flux guide structure and damage free virtual edges
US7580230B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2006 |
| Grant date | Aug 25, 2009 |
| Priority date | — |
| Expiry date | Jan 23, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive sensor having a shape enhanced pinning and a flux guide structure. First and second hard bias layers and lead layers extend from the sides of a sensor stack. The hard bias layers and leads have a stripe height that is smaller than the stripe height of a free layer, resulting in a free layer that extends beyond the back edge of the lead and hard bias layer. This portion of the free layer that extends beyond the back edge of the leads and hard bias layers provides a back flux guide. Similarly, the sensor may have a free layer that extends beyond the front edge of the lead and hard bias layers to provide a front flux guide. The pinned layer extends significantly beyond the back edge of the free layer, providing the pinned layer with a strong shape enhanced magnetic anisotropy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.