Temperature sensor
US7581882B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 17, 2007 |
| Grant date | Sep 1, 2009 |
| Priority date | — |
| Expiry date | Sep 14, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01K7/01
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A bandgap reference circuit inputs a reference potential trimming signal therein, generates a reference potential using PN-junction diode characteristics and generates a first temperature-dependent potential dependent on the temperature. A subtraction amplifier circuit inputs the reference potential, the first temperature-dependent potential and a subtracter trimming signal therein and generates a second temperature-dependent potential amplified by subtraction amplification of both a constant bias potential obtained by performing multiplication on the reference potential and the first temperature-dependent potential. An A/D converter inputs the reference potential and the second temperature-dependent potential therein and A/D-converts the second temperature-dependent potential by reference to the reference potential to thereby output temperature decision results.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.