Plasma processing member
US7582184B2 · kind B2 · utility
20Cited by
2References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2006 |
| Grant date | Sep 1, 2009 |
| Priority date | — |
| Expiry date | May 5, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0206
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing member includes a ceramic base, a plasma generating electrode embedded in the ceramic base, and an electrode power supply member connected to the plasma generating electrode. The impedance of the plasma processing member when plasma is generated using high frequency power at a frequency higher than 13.56 MHz is adjusted to 25Ω or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.