Reducing corrosion in copper damascene processes
US7582558B2 · kind B2 · utility
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3References
7Claims
0Family size
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Key dates
| Filing date | Jul 14, 2006 |
| Grant date | Sep 1, 2009 |
| Priority date | — |
| Expiry date | Jun 18, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Copper interconnects may be made using the damascene process with reduced copper corrosion. Copper corrosion may be reduced by planarizing through excess copper down to, but not completely through, a copper diffusion barrier layer. The copper diffusion barrier layer may be removed using a different technique. Thereafter, suitable chemicals may be utilized to clean the structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.