Method of selectively depositing materials on a substrate using a supercritical fluid
US7582561B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 1, 2005 |
| Grant date | Sep 1, 2009 |
| Priority date | — |
| Expiry date | Oct 18, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/914
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for depositing one or more materials on a substrate, such as for example, a semiconductor substrate that includes providing the substrate; applying a polymer film to at least a portion of a surface of the substrate; and exposing the semiconductor substrate to a supercritical fluid containing at least one reactant for a time sufficient for the supercritical fluid to swell the polymer and for the at least one reactant to penetrate the polymer film. The reactant is reacted to cause the deposition of the material on at least a portion of the substrate. The substrate is removed from the supercritical fluid, and the polymer film is removed. The process permits the precise deposition of materials without the need for removal of excess material using chemical, physical, or a combination of chemical and physical removal techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.