Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereof
US7582890B2 · kind B2 · utility
2Cited by
3References
34Claims
0Family size
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Key dates
| Filing date | Apr 11, 2005 |
| Grant date | Sep 1, 2009 |
| Priority date | — |
| Expiry date | Dec 12, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Provided are magnetic tunnel junction structures having bended tips at both ends thereof, magnetic RAM cells employing the same and photo masks used in formation thereof. The magnetic tunnel junction structures have a pinned layer pattern, a tunneling insulation layer pattern and a free layer pattern, which are stacked on an integrated circuit substrate. At least the free layer pattern has a main body as well as first and second bended tips each protruded from both ends of the main body when viewed from a plan view.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.