Integrated circuit comprising an organic semiconductor, and method for the production of an integrated circuit

US7582896B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Marcus Halik · Erlangen, DE
• Hagen Klauk · Erlangen, DE
• Guenter Schmid · Hemhofen, DE
• Andreas Walter · Egloffstein, DE
• Ute Zschieschang · Stuttgart, DE

Key dates

• Filing date: Feb 27, 2006
• Grant date: Sep 1, 2009
• Expiry date: Mar 3, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K10/471
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

An embodiment of the invention provides an integrated circuit having an organic field effect transistor (OFET) with a dielectric layer. The dielectric layer is prepared from a polymer formulation comprising: about 100 parts of at least one crosslinkable base polymer, from about 10 to about 20 parts of at least one di- or tribenzyl alcohol compound as an electrophilic crosslinking component, from about 0.2 to about 10 parts of at least one photo acid generator, and at least one solvent. Another embodiment provides a semiconductor fabrication method. The method comprises applying the polymer formulation to a surface of a substrate, drying the polymer formulation, crosslinking the polymer formulation after drying, and baking the polymer formulation after crosslinking.